(China (Mainland))
Product Summary
The K4T51163QE-ZCE6 is a 512Mb E-die DDR2 SDRAM specification. The K4T51163QE-ZCE6 is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip K4T51163QE-ZCE6 is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.
Parametrics
K4T51163QE-ZCE6 absolute maximum ratings: (1)VDD Voltage on VDD pin relative to VSS: - 1.0 V ~ 2.3 V; (2)VDDQ Voltage on VDDQ pin relative to VSS: - 0.5 V ~ 2.3 V; (3)VDDL Voltage on VDDL pin relative to VSS: - 0.5 V ~ 2.3 V; (4)VIN, VOUT Voltage on any pin relative to VSS: - 0.5 V ~ 2.3V; (5)TSTG Storage Temperature: -55 to +100℃.
Features
K4T51163QE-ZCE6 features: (1)Programmable CAS Latency: 3, 4, 5, 6; (2)Programmable Additive Latency: 0, 1 , 2 , 3, 4 , 5; (3)Write Latency(WL) = Read Latency(RL) -1; (4)Burst Length: 4 , 8(Interleave/nibble sequential); (5)Programmable Sequential / Interleave Burst Mode; (6)Bi-directional Differential Data-Strobe (Single-ended datastrobe is an optional feature); (7)Off-Chip Driver(OCD) Impedance Adjustment; (8)On Die Termination.
Diagrams
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K4T51043QC-ZC(L)D5 |
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K4T51043QC-ZC(L)E6 |
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K4T51043QC-ZC(L)E7 |
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K4T51043QE |
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