(China (Mainland))
Product Summary
The 2N2914 is a dual NPN planar transistor in TO77 package.
Parametrics
2N2914 absolute maximum ratings: (1)Collector – Base Voltage: 45 V; (2)Collector – Emitter Voltage: 45 V; (3)Emitter – Base Voltage: 6 V; (4)Continuous Collector Current: 30; (5)Total Device Dissipation TAMB = 25℃: 300 mW; (6)Total Device Dissipation TC = 25℃: 750 mW; (7)Storage Temperature Range: -65 to 200 ℃; (8)Lead temperature (Soldering, 10 sec.): 300 ℃.
Features
2N2914 electrical characteristics: (1)Collector – Base Breakdown Voltage: 45 V; (2)Collector – Emitter Breakdown Voltage: 45 V; (3)Emitter – Base Breakdown Voltage: 6 V; (4)Collector Cut-off Current: 10 nA; (5)Collector Cut-off Current: 2 nA; (6)Emitter Cut-off Current: 2 nA; (7)DC Current Gain: 600; (8)Base – Emitter Voltage: 0.70 V; (9)Collector – Emitter Saturation Voltage: 0.35 V.
Diagrams
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 2N2914 |
Other |
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Data Sheet |
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2N2905-B |
Micro Commercial Components (MCC) |
Transistors Bipolar (BJT) 600mA 60v |
Data Sheet |
Negotiable |
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2N2906A |
Central Semiconductor |
Transistors Bipolar (BJT) PNP Gen Pur SS |
Data Sheet |
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2N2907AUB |
Optek |
Transistors Bipolar (BJT) PNP G.P. Transistor 3 Pin |
Data Sheet |
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2N2907A |
Central Semiconductor |
Transistors Bipolar (BJT) PNP Gen Pur SS |
Data Sheet |
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2N2907AUA |
Optek |
Transistors Bipolar (BJT) PNP G.P. Transistor 4 Pin |
Data Sheet |
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2N2907 |
Central Semiconductor |
Transistors Bipolar (BJT) PNP Silicon |
Data Sheet |
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