(China (Mainland))
Product Summary
The 2N3879 is a Silicon NPN Power Transistor. The device is suitable for For high-speed switching and linear-amplifier applications.
Parametrics
2N3879 absolute maximum ratings: (1)VCBO, Collector-base voltage Open emitter: 120 V; (2)VCEO(SUS), Collector-emitter sustaining voltage Open base: 75 V ; (3)VEBO, Emitter-base voltage Open collector: 7 V; (4)IC, Collector current: 7 A; (5)ICM, Collector current-Peak: 10 A; (6)IB, Base current: 5 A; (7)PT, Total power dissipation TC=25℃: 35 W; (8)Tj, Junction temperature: 200℃; (9)Tstg, Storage temperature: -65 to 200℃.
Features
2N3879 features: (1)With TO-66 package; (2)Wide area of safe operation; (3)High sustaining voltage.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 2N3879 |
Other |
|
Data Sheet |
Negotiable |
|
||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
2N3810 |
Other |
|
Data Sheet |
Negotiable |
|
||||
 |
2N3819_D27Z_Q |
Fairchild Semiconductor |
Transistors RF JFET NCh RF Transistor |
Data Sheet |
Negotiable |
|
||||
|
2N3819_D74Z |
Fairchild Semiconductor |
Transistors RF JFET NCh RF Transistor |
Data Sheet |
Negotiable |
|
||||
|
2N3820 |
Fairchild Semiconductor |
JFET P-Channel Transistor General Purpose |
Data Sheet |
Negotiable |
|
||||
 |
2N3819-E3 |
Vishay/Siliconix |
JFET 25V 10mA |
Data Sheet |
Negotiable |
|
||||
|
2N3819_Q |
Fairchild Semiconductor |
JFET N-CH -25V 10mA BULK |
Data Sheet |
Negotiable |
|
||||
