(China (Mainland))
Product Summary
The 2SC1946A is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mpbile radio applications.
Parametrics
2SC1946A absolute maximum ratings: (1)collector to base voltage: 35 V; (2)emitter to base voltage: 4 V; (3)collector to emitter voltage: 17 V; (4)collector current: 7 A; (5)collector dissipation: 3 W at Ta=25 ℃, 50 W at Tc=25 ℃; (6)junction temperature: 175 ℃; (7)storage temperature: -55 to 175 ℃.
Features
2SC1946A features: (1)high power gain: Gpe≧10dB @ VCC=13.5 V, Po=30W, f=175MHz; (2)emitter ballasted construction and gold metailization for high reliability and good performances; (3)low thermal resistance ceramic package with flange; (4)ability of withstanding more than 20:1 load VSWR when operated at VCC=15.2V, Po=30 W, f=175MHz.
Diagrams
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 2SC1946A |
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